质子轰击GaP电光采样测量  

PROTON BOMBARDED GaP ELECTRO OPTIC SAMPLING

作　　者：张大明[1] 田小建[1] 王艳双[1] 李德辉[1] 衣茂斌[1] 

机构地区：[1]集成光电子学国家重点联合实验室吉林大学实验区

出　　处：《红外与毫米波学报》1999年第1期26-30,共5页Journal of Infrared and Millimeter Waves

基　　金：国家教委博士点基金

摘　　要：在ｎ－ＧａＰ衬底上制作共面波导（ＣＰＷ），用质子轰击的方法减小共面波导的漏电损失，用倍频扫描移相电光采样技术测量了１～５ＧＨｚ微波信号．质子轰击后ＧａＰＣＰＷ的电阻增大了４个量级，在２．３０ＧＨｚ微波信号时，质子轰击ＧａＰＣＰＷ电光采样测量获得了１０ｍＶ／Ｈｚ的电压灵敏度．A coplanar waveguide(CPW) was fabricated on n type GaP substrate, leakage current loss of the CPW was decreased by proton bombardment. Microwave from 1￣5GHz was measured by the CPW electro optic sampling with multiple frequency phase shift scanning system. Measurements of proton bombarded GaP CPW gave resistance value four orders greater than that of un bombarded. The system has a 10mV/Hz sensitivity as the microwave frequency was 2.30GHz.

关 键 词：质子轰击 共面波导 电光采样 磷化镓 

分 类 号：TN250.6[电子电信—物理电子学]