苯热条件下GaP纳米晶的稳定性  

The Stability of GaP Nanocrystals under Benzene Thermal Conditions

作　　者：信春雨[1] 高善民[2] 崔得良[2] 黄柏标[2] 秦晓燕[2] 蒋民华[2] 

机构地区：[1]山东大学图书馆,济南250100 [2]山东大学晶体材料研究所,济南250100

出　　处：《物理化学学报》1999年第2期105-109,共5页Acta Physico-Chimica Sinica

摘　　要：用高温高压苯热合成方法制备了GaP纳米晶，用X射线衍射、光吸收谱及透射电子显微镜对所得样品进行了分析测试．结果表明，GaP纳米晶在苯热条件下是亚稳定态的，反应时间过长及反应温度过高均不利于它的生成和生长．文中还讨论了晶粒度分布与合成条件间的关系，并进行了理论上的定性分析．GaP nanocrystals were synthesized by high temperature high pressure beuzene ther-inal synthesis method, the samples were charartrized by X-ray cliffraction,optical absorption and transmission election microscope. The results showed that GaP nanocrystals were metastable un-der benzene thermaJ conditions. The relationship between the size distriblltion and the synthesis conditiolis was also investigated iu this paper.

关 键 词：GAP 纳米晶 苯热合成 半导体 磷化镓 

分 类 号：O614.371[理学—无机化学] TN304.23[理学—化学]