直接沉淀法制备纳米氧化铈及其抛光硅晶片的性能与影响因素  

Preparation of Ceria Nanoparticles Using Direct Precipitate Method and Factors Influencing on Polishing Performance for Silicon Wafer

作　　者：李艳花[1] 傅毛生[1] 危亮华[1] 周雪珍[1] 周新木[1] 李永绣[1] 

机构地区：[1]南昌大学稀土与微纳功能材料研究中心,化学系,江西南昌330031

出　　处：《中国稀土学报》2010年第3期316-321,共6页Journal of the Chinese Society of Rare Earths

基　　金：国家自然科学基金(20161004);江西省主要学科学术带头人计划(2007DD00800);江西省自然科学基金(0620046)资助

摘　　要：以硝酸铈为原料,十二烷基苯磺酸钠为分散剂,过氧化氢为氧化剂,氨水为沉淀剂,采用直接沉淀法制备了粒径分布均匀的纳米氧化铈粉体,并通过XRD,TEM等手段对粉体进行了表征。采用所制备的氧化铈粉体配置成抛光浆料对硅片进行抛光,研究了浆料pH值、固含量及过氧化氢浓度对n型半导体硅晶片(111)晶面抛光性能的影响。确定了最佳的抛光条件为:pH值10.5,含固量为0.5%,过氧化氢体积分数为1.5%,此时的抛光速率为61.1 nm.min-1,所抛光的硅晶片的表面粗糙度为0.148 nm。Ceria nanoparticles were prepared by direct precipitation using cerium nitrate as raw material,sodium dodecyl benzene sulfonate as dispersion agent,hydrogen peroxide as oxidizing agent,and ammonium hydroxide as precipitant.The as-synthesized ceria nanoparticles were characterized by means of X-ray diffraction（XRD） and transmission electron microscopy（TEM）,and were used as abrasives of slurries for chemical mechanical polishing（CMP） of silicon wafer.The effects of process parameters,including slurry pH,ceria content,and hydrogen peroxide concentration,on the material removal rate（MRR） in the CMP of n-type Si（111） were investigated.A maximum MRR value of 61.1 nm·min-1 was obtained using 0.5%（W/V） ceria slurry with 1.5%（V/V） hydrogen peroxide and adjusting pH 10.5.Correspondingly,the surface roughness Ra of polished n-type Si（111） wafer was 0.148 nm.

关 键 词：纳米CeO2粉体 化学机械抛光 材料去除速率 硅晶片 稀土 

分 类 号：O614.33[理学—无机化学] O614.41[理学—化学]