溅射功率对射频磁控溅射Al掺杂ZnO(ZAO)薄膜性能的影响  

Influence of Sputtering Power on Properties of Al-doped ZnO Films by RF Magnetron Sputtering

作　　者：汪冬梅[1] 周海波 朱晓勇[1] 吕珺[1] 徐光青[1] 吴玉程[1] 郑治祥[1] 

机构地区：[1]合肥工业大学材料科学与工程学院,安徽合肥230009 [2]铜陵化工集团新桥矿业有限公司,安徽铜陵244132

出　　处：《金属功能材料》2010年第3期57-60,共4页Metallic Functional Materials

基　　金：国家自然科学基金(20571022);安徽省十五科技攻关项目(01402007);教育部博士点基金(20060359011)

摘　　要：用射频磁控溅射技术,在纯氩气氛中不同溅射功率(120 W^210 W)下于玻璃衬底上制备了Al掺杂ZnO(ZAO)薄膜。利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、光谱仪和四探针测试仪等对所制备的薄膜进行了晶体结构、光学和电学性能分析。结果表明,纯氩气氛中不同溅射功率下玻璃衬底上原位沉积的ZAO薄膜具有明显的c轴择优取向性,它没有改变ZnO的六角纤锌矿结构;ZAO薄膜的可见光区平均透光率不强烈依赖于溅射功率,为75%左右;原位沉积ZAO薄膜的电阻率达到102Ω.cm数量级范围,随溅射功率由120 W增大到210 W时,薄膜电阻率从132.67Ω.cm降低到21.08Ω.cm。Al-doped ZnO（ZAO） thin films were deposited by radio frequency（RF） magnetron sputtering technique on glass substrate under different sputtering powers in pure argon atmosphere.The influence of sputtering power on the structure,electrical and optical properties of the ZAO films was investigated by X-ray diffraction（XRD）,scanning electron microscopy（SEM）,spectrophotometer and four-point probe.The investigation results show that the as-deposited ZAO thin film has apparently c-axis preferred orientation.Similar to the structure of ZnO,the ZAO thin film has a hexagonal wurtzie structure.The visible transmittance of the film is about 75%,which does not depend strongly on sputtering power.The resistivity of the as-deposited ZAO film is in the order of 102 Ω·cm,which decreases from 132.67 Ω·cm to 21.08 Ω·cm with the sputtering power increased from 120 W to 210 W.

关 键 词：ZAO薄膜 RF磁控溅射 结构性能 可见光透过率 电阻率 

分 类 号：O484.4[理学—固体物理]