薄膜和量子点的外延生长(英文)  

Epitaxial Growth of a Thin Film and Quantum Dots

作　　者：吴巨[1] 金鹏[1] 曾一平[1] 王宝强[1] 王占国[1] 

机构地区：[1]中国科学院半导体研究所半导体材料科学重点实验室,北京100083

出　　处：《微纳电子技术》2010年第6期321-329,共9页Micronanoelectronic Technology

基　　金：National Natural Science Foundation of China (60676029,60876086);National Basic Research Program of China (973 Program) (2006CB604904,2006CB604908)

摘　　要：首先简短地综述了人们关于外延薄膜材料层状(layer-by-layer)生长机制的认识;给出了作者关于自组装量子点外延生长过程的评价和观点,强调了量子点自组装生长过程的复杂性和非线性性质。在对已经发表过的实验数据进一步分析的基础上,作者对一个量子点自组装生长形成所需要的时间作了一个估算,说明这是一个非常快的过程(<10-4s)。最后,作者提出了一个理解量子点自组装生长过程机制的模型。The authors give a brief review on people＇s general view on the epitaxial growth of a thin film via the layer-by-layer growth mode. Then they have a remark on the self-assembling of quantum dots via the epitaxial growth to notice its complexity and nonlinear behavior. Furthermore, based on the further analysis of the experimental data published previously, the authors have an estimate of the time scale for the growth of a quantum dot and demonstrate that it is an unexpectedly rapid process. Finally, the authors propose a preliminary conceptual framework within which the formation of quantum dots can be understood in the InAs/GaAs （001） system.

关 键 词：外延生长 薄膜 自组装量子点 InAs/GaAs(001) 

分 类 号：TN304.23[电子电信—物理电子学] O484.1[理学—固体物理]