α-SiN_x/nc-Si/α-SiN_x双势垒结构的电荷存储特性  

Charge Storage Effects of the α-SiNx/nc-Si/α-SiNx Structure

作　　者：宋捷[1] 丁宏林[1] 

机构地区：[1]韩山师范学院物理与电子工程系,广东潮州521041

出　　处：《韩山师范学院学报》2010年第3期43-47,共5页Journal of Hanshan Normal University

摘　　要：利用等离子增强化学气相沉积(PECVD)技术,采用NH_3等离子体预氮化法淀积α-SiN_x介质膜,同时结合layer by layer生长nc-Si的方法一次性原位制备了α-SiN_x/nc-Si/α-SiN_x双势垒结构样品.通过原子力显微镜(AFM)测量,估算了nc-Si的密度为1.2×10^(11)cm^(-2).通过C-V测量研究镶嵌在SiN_x双势垒层中的nc-Si颗粒的电荷存储现象.C-V曲线出现明显的迥滞现象,迴滞窗口约为1 V,表明结构中电荷存储特性.根据迴滞窗口,计算了结构中存储电荷的密度,发现存储电荷密度与nc-Si层的晶粒密度具有相同的数量级.Theα-SiNx/nc-Si/α-SiNx double barrier structure samples are fabricated in the PECVD chamber by using nitridaton of silicon substrate,deposition of SiN_x and LBL deposition techniques.Atom force microscopy measurement shows that the denisty of nc-Si is about 1.2×10^（11）cm^（-2）.The C-V measurement method is adopted to investigate the charge storage effects of theα-SiNx/nc-Si/α-SiNx structure.A large hysteresis of about 1.0V is observed in the C-V characteristics,which is attributed to the storage of the charges into the nc-Si dots.The total stored charges are estimated from the hysteresis window.It is found that the density of storaged charges and nc-Si have the same orders-of-magnitude.

关 键 词：双势垒结构 电荷存储 NC-SI SiN_x 

分 类 号：TN304[电子电信—物理电子学]