Influence of polaron effects on the ground state of weak-coupling exciton in semiconductor quantum dots  

作　　者：额尔敦朝鲁 乌云其木格 辛伟 

机构地区：[1]Institute of Condensed Matter Physics,Hebei Normal University of Science & Technology [2]College of Physics and Electronic Information,Inner Mongolia University for Nationalities

出　　处：《Optoelectronics Letters》2010年第4期317-320,共4页光电子快报（英文版）

基　　金：supported by the Natural Science Foundation of Hebei Province (No. A2008000463)

摘　　要：The influence of polaron effects on the effective potential of weak-coupling exciton in semiconductor quantum dots(QDs) is studied based on the Lee-Low-Pines-Huybrechts variational method.The results show that the effective potential of the exciton consists of three parts:coulomb potential,induced potential and confining potential.Numerical calculations for the GaAs quantum dot,as an example,are performed.The result indicates that the effective potential of the exciton increases with the electron-hole distance.It is found that the polaron effects have remarkable influence on the states of the exciton:helpful to the stability of the light-hole exciton,but unfavorable to the stability of the heavy-hole exciton.The influence of polaron effects on the effective potential of weak-coupling exciton in semiconductor quantum dots（QDs） is studied based on the Lee-Low-Pines-Huybrechts variational method.The results show that the effective potential of the exciton consists of three parts：coulomb potential,induced potential and confining potential.Numerical calculations for the GaAs quantum dot,as an example,are performed.The result indicates that the effective potential of the exciton increases with the electron-hole distance.It is found that the polaron effects have remarkable influence on the states of the exciton：helpful to the stability of the light-hole exciton,but unfavorable to the stability of the heavy-hole exciton.

关 键 词：半导体量子点 极化子激子 极化子效应 弱耦合 基态 GaAs 诱发电位 有效势 

分 类 号：O471.1[理学—半导体物理] TN383[理学—物理]