片上差分螺旋电感模型及参数提取  

Modeling of on-chip differential spiral inductors and parameter extraction

作　　者：张莉[1] 唐杨[1] 刘博[1] 王燕[1] 余志平[1] 

机构地区：[1]清华大学微电子学研究所,北京100084

出　　处：《清华大学学报（自然科学版）》2010年第5期768-771,776,共5页Journal of Tsinghua University(Science and Technology)

基　　金：国家"九七三"重点基础研究项目(2006CB932404)

摘　　要：为了完善现有的射频CMOS电路中片上差分螺旋电感的模型,提出了一种从测量得到的S参数采用改进差分进化算法提取有中心抽头的片上差分螺旋电感参数的方法。等效电路采用考虑了趋肤效应的2-π模型,基于改进差分进化算法的自动参数提取过程被证明是有效的。为验证该方法,制备并测试了17个有中心抽头的差分螺旋电感,2端口S参数的频率范围为0.3~8.5 GHz。参数提取结果表明,17个电感的RMS误差均在9%以内。良好的参数提取精度证明了该建模方法的灵活性和有效性。该方法可用于射频以及混合信号集成电路设计。A method was developed to extract model parameters from measured S-parameters for silicon based on-chip center-tapped differential spiral inductors to improve conventional models.The two-π equivalent circuit topology was used in which conductor skin effects are considered with the automated extraction procedure based on the modified differential evolution algorithm demonstrated to be efficient and effective.17 center-tapped differential inductors were fabricated and the equivalent circuit parameters were extracted from two-port S-parameter measurements with frequencies of 0.3—8.5 GHz to verify the method accuracy.The results show that the RMS errors are within 9% for all the 17 inductors,which demonstrates the flexibility of the modeling method that can be used in the design of RF ICs and mixed signal ICs.

关 键 词：射频CMOS 差分螺旋电感 2-π模型 参数提取 

分 类 号：TN43[电子电信—微电子学与固体电子学]