高线性度PHEMT达林顿放大器  

High Linearity-wideband PHEMT Darlington Amplifier

作　　者：李晓倩[1] 钱峰[1] 郑远 

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2010年第2期218-221,250,共5页Research & Progress of SSE

摘　　要：使用E-PHEMT工艺,结合有源自偏置技术与达林顿放大器技术,制作一种新型E-PHEMT达林顿反馈放大器。相较于传统结构,这种新型结构具有显著的两大优点,采用E-PHEMT的技术使放大器线性度获得较大提高。在0.5~3 GHz的频率范围内,5 V供电电压的情况下,新型放大器可以保持21.5 dBm以上的P1dB;8 V情况下,更是能达到23.5 dBm以上的P1dB;采用有源自偏置技术以后,取消了传统结构中的偏置电阻,减少了电压消耗,使电源效率提高了近40%,并且使得偏置电流、增益、IP3和P1dB对温度的敏感度大大降低。The paper reports the new E-PHEMT Darlington feedback amplifier with a active self-biased topology.Compared with the conventional InGaP Darlington amplifier, the new amplifier has two prominent advantages.Firstly,there is a great improvement on linearity performance.We can achieve of P1dB no less than 21.5 dBm at 5 V of supply voltage and no less than 23.5 dBm at 8 V of supply voltage between 0.5～3 GHz.Secondly,the new amplifier eliminates the need for the external biased resistor of conventional case and operates directly from the supply voltage after employing active self-biased topology.The amplifier overall efficiency may be improved as much as 40%.The new amplifier has the much lower Idd,gain,IP3 and P1dB sensitivity with temperature variation.

关 键 词：E-PHEMT 达林顿 有源自偏置 宽带 高线性度 

分 类 号：TN722.55[电子电信—电路与系统]