在金属薄膜衬底上定向生长碳纳米管  

Direct growth of aligned carbon nanotubes on metal thin film substrate

作　　者：戴玮[1] 朱宁[1] 

机构地区：[1]天津理工大学电子信息工程学院天津市薄膜电子与通信器件重点实验室,天津300384

出　　处：《功能材料》2010年第6期1030-1033,共4页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(50972105);天津市重点科技攻关资助项目(06YFGZSH00300);天津市薄膜电子与通信器件重点实验室科研基金资助项目(06TXTJJC14700)

摘　　要：研究和探讨了预处理和温度影响对碳纳米管定向生长机制的作用。利用等离子体增强化学气相沉积(PECVD)的方法,以金属Fe薄膜为催化剂,在单晶硅衬底上定向生长碳纳米管(CNT)。通过给予不同的预处理时间和温度条件,在Fe/Si衬底上沉积出碳纳米管,通过扫描电子显微镜(SEM)进行表征,将不同的条件下生长的碳纳米管进行对比。结果表明,在适当的工艺条件下,可以生长出方向性好,纯度高的碳纳米管。In this paper,the effects of pretreatment and temperature on mechanism of direct growth of aligned carbon nanotubes were studied and discussed.Vertically aligned carbon nanotubes（CNT） were grown on the monocrystalline silicon by plasma enhanced chemical vapor deposition（PECVD）,and Fe thin film acts as catalyst.Given the conditions of different pretreatment time and temperature,carbon nanotubes are deposited on the Fe/Si substrate.After observed by the scanning electron microscope（SEM）,carbon nanotubes that are grown in different conditions are contrasted.The result shows that carbon nanotubes of better directivity and higher purity can be grown in a proper condition.

关 键 词：碳纳米管 预处理 温度 等离子体增强化学气相沉积 定向生长 

分 类 号：TP211.51[自动化与计算机技术—检测技术与自动化装置]