基于双正交提升小波的单晶硅表面形貌特征提取  

Feature extraction on surface topography of monocrystalline based on biorthogonal wavelet lifting scheme

作　　者：徐瑞芬[1] 吕晶晶[1] 吴立群[1] 

机构地区：[1]杭州电子科技大学机械工程学院,浙江杭州310018

出　　处：《机电工程》2010年第2期57-60,共4页Journal of Mechanical & Electrical Engineering

摘　　要：为了提高单晶硅太阳能电池的光电转换效率,提出了在单晶硅的表面制作微结构。对微结构的提取,根据单晶硅片表面形貌的特性,选用了提升小波(采用的基小波为bior4.4)。数据处理结果表明,提升小波能将单晶硅表面的微结构很好地提取出来,可以有效地消除边界和畸变效应等问题。对提取的形貌特征进行了特征量的计算,实验数据表明单晶硅表面现有的微结构工艺方法有较大改善的可能性。Aiming at improving the photoelectric conversion efficiency of monocrystalline silicon solar cell,the process of the microstructure of solar cell was put forward.In the light of the characteristics on the surface topography of monocrystalline silicon,the lifting wavelet was selected（using the base wavelet bior4.4）to carry on the appearance extraction.The results show that the lifting wavelet can extract the features of monocrystalline silicon superficial appearance perfectly,that eliminate questions of boundary and distortion effect effectively etc..And then the characteristic features were calculated.The results indicate that the monocrystalline silicon surface existing the microstructure processing method has the bigger improvement possibility.

关 键 词：表面形貌 单晶硅 微结构 特征提取 

分 类 号：TB321[一般工业技术—材料科学与工程]