非晶硅薄膜表面形貌和光学性质的工艺研究  

Process Research on Surface Morphology and Refractive Index of Amorphous Silicon Thin Films Deposited by PECVD

作　　者：张佳宁[1] 刘爽[1] 张怡[2] 陈伟[1] 

机构地区：[1]电子科技大学光电信息学院,成都610054 [2]重庆光电技术研究所,重庆400060

出　　处：《半导体光电》2010年第3期406-411,共6页Semiconductor Optoelectronics

摘　　要：采用PECVD在K9玻璃基底上制备了非晶硅薄膜,通过改变射频功率、反应压强和基片温度制得不同的薄膜样品。采用金相显微镜对其表面形貌进行了观察,通过椭圆偏振法测得了不同工艺条件下薄膜样品的折射率、消光率及厚度。结合成膜机理和经典电子理论对测试结果进行分析得到,工艺参数通过表面扩散、原子刻蚀以及基元成分、能量和浓度等中间因素决定着样品的表面形貌和光学性质。Amorphous thin films were deposited by PECVD on K9 glass substrates. Three groups of a-Si film samples were prepared with different processing parameters. Surface morphology and optical properties were observed by metallographic microscope and ellipsometer respectively. The test results were analyzed by using the growth mechanism of a-Si films and the classical electron theory. It is concluded that the surface morphology and optical properties of the samples were determined by the processing parameters indirectly through the micro-process such as surface diffusion,atomic etching,energy.

关 键 词：非晶硅 PECVD 折射率 表面形貌 生长机理 

分 类 号：O484.4[理学—固体物理]