应用于高密度近场光存储技术的亚波长纳米孔  

The Application of Subwavelength Hole in High Density Near-field Optics Data Storage

作　　者：李海军[1,2,3] 林文魁[1,2,3] 张晓东[1] 査强 王媛[1] 朱贺[1,4] 付思齐[1,4] 张宝顺[1] 

机构地区：[1]中国科学院苏州纳米研究所,江苏苏州215125 [2]中国科学院半导体研究所,北京100083 [3]中国科学院研究生院,北京100049 [4]长春理工大学,长春130022

出　　处：《半导体光电》2010年第3期418-421,共4页Semiconductor Optoelectronics

基　　金：苏州市科技发展专项项目(ZXG0712)

摘　　要：近场光存储技术因其高分辨率、超出传统光学衍射极限的限制等特点成为实现下一代高密度光存储的关键解决方案之一。目前应用的主要瓶颈是其光源较低的透过强度难以达到实际应用的要求。文章利用金属表面的周期性结构激发表面等离子体激元来提高亚波长纳米孔的透过率的解决途径。实验中制作了两种周围带有表面周期结构的纳米微孔,并对小孔周围光栅状结构的形状对纳米孔透过强度的影响进行了讨论。在此基础上提出了将纳米孔应用于高密度存储领域的设想。Near-field optical storage technology has becoming one of the key solutions for the next generation of high-density optical storage because of its high resolution,beyond the traditional optical diffraction limit and many other advantages. At present,the main difficulty for practical application is relatively low transmission intensity of subwavelength hole. The subwavelength hole with some periodic structure could excite surface plasmon to improve transmission efficiency. Two kind of periodic structure in the surface of metal was prepared,and the influence of different structure on transmission was discussed. On this basis,the subwavelength hole is proposed to application in high density date storage area.

关 键 词：近场光学 表面等离子体 亚波长纳米孔 透过率 

分 类 号：O43[机械工程—光学工程]