微电子封装用SiC_p/Al复合材料的中温钎焊  

Brazing of SiC_p/Al composites for microelectronic packaging

作　　者：常玲玲[1] 何新波[1] 吴茂[1] 曲选辉[1] 

机构地区：[1]北京科技大学材料科学与工程学院,北京100083

出　　处：《粉末冶金材料科学与工程》2010年第3期219-224,共6页Materials Science and Engineering of Powder Metallurgy

基　　金：国家自然科学基金资助项目(50274014;50774005);国家重点基础研究发展规划(973计划)资助项目(2006CB605207);国家高技术研究发展计划(863计划)资助项目(2006AA03Z557)

摘　　要：选用Al-Ag-Cu和Al-Si-Cu-Ni两种钎料,分析钎料的熔化特性和微观组织,并分别用于钎焊化学镀Ni后的SiCp/Al复合材料,研究其结合机理。结果表明,Al-Ag-Cu和Al-Si-Cu-Ni都具有很好的熔化特性,熔点均在520-530℃之间,具有很窄的熔化温度区间。用这2种钎料钎焊化学镀Ni后的SiCp/Al复合材料时,Ni镀层与Al基体发生反应生成Al3Ni和Al3Ni2化合物层,同时与钎料发生界面反应生成Al-Ni-Cu和Al-Ag-Cu等化合物,从而保证钎焊接头牢固的连接。钎料中的Ag和Cu元素穿过Ni（P）镀层,扩散到Al基体中,形成Al2Cu、Ag2Al等金属间化合物。Al-Ag-Cu and Al-Si-Cu-Ni brazing alloys have been developed for brazing of SiCp/Al composites coated by Ni.It is found that both of the two brazing alloys have the melting point in the region of 520~530 ℃ and a narrow melting temperature range.During brazing,the Ni layer reacts with Al substrate and forms Al3Ni and Al3Ni2 compounds.Meanwhile,the Ni layer reacts with the two brazing alloys and forms Al-Ni-Cu and Al-Ag-Cu compounds,which ensures a good bonding strength of brazing joint.It has been also found that the Ag and Cu elements penetrate through the Ni layer during brazing and react with Al substrate,resulting in the formation of Al2Cu and Ag2Al intermetallic compounds.

关 键 词：微电子封装 SICP/AL复合材料 钎焊 金属间化合物 

分 类 号：TN305.94[电子电信—物理电子学]