SiC晶须的原位生长及其在C/C复合材料抗氧化涂层中的应用  

In-situ growth of SiC whiskers and application in anti-oxidation coating of C/C composite materials

作　　者：李军[1] 张翔[1] 廖寄乔[1] 谭周建[1] 

机构地区：[1]中南大学粉末冶金国家重点实验室,长沙410083

出　　处：《粉末冶金材料科学与工程》2010年第3期277-282,共6页Materials Science and Engineering of Powder Metallurgy

基　　金：国家重点基础研究发展计划(973计划)资助项目(2006CB600904);国家自然科学基金委员会创新研究群体科学基金资助项目(50721003)

摘　　要：以三氯甲基硅烷(CH3SiCl3,MTS)为先驱体原料,采用化学气相沉积法在C/C复合材料基体上原位生长碳化硅晶须(SiCw),制备CNT-SiCw抗氧化涂层,并在1 100℃、空气中对该氧化涂层进行10 h抗氧化实验,研究SiCw的制备工艺以及SiCw在C/C复合材料抗氧化涂层中的作用。结果表明:制备碳化硅晶须的最佳工艺为:温度1 100℃、常压、载气和稀释气体流量均为100 mL/min。在此工艺下,沉积时间为15 min时,能制备出高长径比、平均直径约100 nm的碳化硅晶须。有CNT-SiCw涂层C/C复合材料试样在空气中氧化后的质量损失率仅0.7%,没有涂层的试样的质量损失率约为15%。Silicon carbide whiskers was deposited on carbon/carbon composites which pre-deposited with carbon nanotubes by chemical vapor deposition（CVD） using CH3SiCl3（MTS） as the precursor.Anti-oxidation property of CNT-SiCw coated C/C composite was studied at 1 100 ℃ in air.The process parameters of silicon carbide whiskers deposition and the role of silicon carbide whiskers in anti-oxidation were investigated.The results show that the optimum process parameters for preparing silicon carbide whiskers coating are as follows： deposition temperature of 1 100 ℃,normal pressure,flow of carry gas and dilute gas both of 100 mL/min.Silicon carbide whiskers with high length-diameter ratio and average diameter of about 100 nm are obtained when the deposition time is 15 min.After 10 h oxidation at 1 100 ℃ in air,the mass loss of uncoated C/C composite is 15%,while the CNT-SiCw coated C/C composite is only 0.7%.

关 键 词：碳化硅晶须 长径比 CNT-SiCw复合涂层 CVD 

分 类 号：TB332[一般工业技术—材料科学与工程]