Effects of InGaN barriers with low indium content on internal quantum efficiency of blue InGaN multiple quantum wells  

作　　者：汪莱 王嘉星 赵维 邹翔 罗毅 

机构地区：[1]Tsinghua National Laboratory for Information Science and Technology/State Key Lab on Integrated Optoelectronics,Department of Electronic Engineering,Tsinghua University

出　　处：《Chinese Physics B》2010年第7期467-470,共4页中国物理B（英文版）

基　　金：supported by the National Natural Science Foundation of China (Grant Nos. 60536020,60723002,50706022 and 60977022);the National Basic Research Program of China (Grant Nos. 2006CB302800 and 2006CB921106);the National High Techgnology Research and Development Program of China (Grant Nos. 2007AA05Z429 and 2008AA03A194);the Beijing Natural Science Foundation,China (Grant No. 4091001);the Industry,Academia and Research combining and Public Science and Technology Special Program of Shenzhen,China (Grant No. 08CXY-14)

摘　　要：Blue In0.2Ga0.8N multiple quantum wells （MQWs） with InxGa1-xN （x = 0.01 - 0.04） barriers are grown by metal organic vapour phase epitaxy. The internal quantum efficiencies （IQEs） of these MQWs are studied in a way of temperature-dependent photoluminescenee spectra. Furthermore, a 2-channel Arrhenius model is used to analyse the nonradiative recombination centres （NRCs）. It is found that by adopting the InGaN barrier beneath the lowest well, it is possible to reduce the strain hence the NRCs in InGaN MQWs. By optimizing the thickness and the indium content of the InGaN barriers, the IQEs of InGaN/InGaN MQWs can be increased by about 2.5 times compared with conventional InGaN/GaN MQWs. On the other hand, the incorporation of indium atoms into the intermediate barriers between adjacent wells does not improve IQE obviously. In addition, the indium content of the intermediate barriers should match with that of the lowest barrier to avoid relaxation.Blue In0.2Ga0.8N multiple quantum wells （MQWs） with InxGa1-xN （x = 0.01 - 0.04） barriers are grown by metal organic vapour phase epitaxy. The internal quantum efficiencies （IQEs） of these MQWs are studied in a way of temperature-dependent photoluminescenee spectra. Furthermore, a 2-channel Arrhenius model is used to analyse the nonradiative recombination centres （NRCs）. It is found that by adopting the InGaN barrier beneath the lowest well, it is possible to reduce the strain hence the NRCs in InGaN MQWs. By optimizing the thickness and the indium content of the InGaN barriers, the IQEs of InGaN/InGaN MQWs can be increased by about 2.5 times compared with conventional InGaN/GaN MQWs. On the other hand, the incorporation of indium atoms into the intermediate barriers between adjacent wells does not improve IQE obviously. In addition, the indium content of the intermediate barriers should match with that of the lowest barrier to avoid relaxation.

关 键 词：metal organic vapour phase epitaxy quantum wells nitrides light emitting diodes 

分 类 号：O471.1[理学—半导体物理]