Band structure and absorption coefficient in GaN/AlGaN quantum wires  

作　　者：姚文杰 俞重远 刘玉敏 

机构地区：[1]Key Laboratory of Information Photonics and Optical Communications,Ministry of Education,Beijing University of Posts and Telecommunications

出　　处：《Chinese Physics B》2010年第7期479-483,共5页中国物理B（英文版）

基　　金：supported by the National High Technology Research and Development Program of China (Grant No. 2009AA03Z405);the National Natural Science Foundation of China (Grant Nos. 60908028,60971068 and 60644004)

摘　　要：The band structures of rectangular GaN/AlGaN quantum wires are modeled by using a parabolic effective-mass theory. The absorption coefficients are calculated in a contact-density matrix approach based on the band structure. The results obtained indicate that the peak absorption coefficients augment with the increase of the injected carrier density, and the optical gain caused by interband transition is polarization anisotropic. For the photon energy near 1.55 eV, we can obtain relatively large peak gain. The calculations support the previous results published in the recent literature.The band structures of rectangular GaN/AlGaN quantum wires are modeled by using a parabolic effective-mass theory. The absorption coefficients are calculated in a contact-density matrix approach based on the band structure. The results obtained indicate that the peak absorption coefficients augment with the increase of the injected carrier density, and the optical gain caused by interband transition is polarization anisotropic. For the photon energy near 1.55 eV, we can obtain relatively large peak gain. The calculations support the previous results published in the recent literature.

关 键 词：absorption coefficient GAIN polarization anisotropic quantum wires 

分 类 号：O471.5[理学—半导体物理] O484.41[理学—物理]