VLSI金属互连线电迁移噪声检测敏感性的逾渗模拟  

Characterize Electromigration of VLSI Metal Interconnects

作　　者：李宇博[1] 马中发[2] 张鹏[2] 

机构地区：[1]空军工程大学,陕西西安710051 [2]西安电子科技大学,陕西西安710071

出　　处：《现代电子技术》2010年第14期186-189,共4页Modern Electronics Technique

摘　　要：在电迁移物理机制的基础上结合逾渗理论,建立了一种金属互连线电迁移的逾渗模型。基于该模型,采用蒙特卡罗方法模拟了超大规模集成电路(VLSI)金属互连线电迁移过程中电阻和低频噪声参数的变化规律。结果表明,与传统的电阻测量方法相比,低频噪声表征方法对电迁移损伤更敏感,检测的效率更高。该研究结果为低频噪声表征VLSI金属互连线电迁移损伤的检测方法提供了理论依据。A percolation model for electromigration of metal interconnects was built on the basis of electromigration physical mechanism and percolation theory. Based on the model, the evolutions of resistance and low-frequency noise paramaters during electromigation of VLSI metal interconnects were simulated with Monte Carlo method. The results show that the low- frequency noise characterization method is more sensitive and more efficient in comparison with the traditional method of re- sistance measurement for electromigration damage. A theory basis is provided for the detecting method to characterize the electromigration damage of VLSI interconnects by low-frequency noise.

关 键 词：电迁移 LF噪声 逾渗模拟 敏感性 

分 类 号：TN47[电子电信—微电子学与固体电子学]