热喷涂法制备Sb掺杂的SnO_2薄膜  

ANTIMONY-DOPED TIN OXIDE FILMS BY SPRAY PYROLYSIS PROCESS

作　　者：陈小龙[1] 蒲永平[1] 吴胜红 赵新[1] 吴海东[1] 

机构地区：[1]陕西科技大学材料科学与工程学院,陕西西安710021 [2]东莞泰阳电子有限公司,广东东莞523325

出　　处：《陕西科技大学学报（自然科学版）》2010年第3期28-30,共3页Journal of Shaanxi University of Science & Technology

基　　金：教育部科学技术研究重点项目(209126);陕西省科技攻关项目;陕西科技大学研究生创新基金项目

摘　　要：以SnCl4·5H2O和SbCl3为原料,采用喷雾热分解法在管状石英玻璃基材上制备出Sb掺杂的SnO2透明导电薄膜,并采用X射线衍射仪(XRD)和原子力显微镜(AFM)对薄膜的结构和表面形貌进行了分析,研究了Sb掺杂量和喷涂温度对薄膜方阻及结构的影响.结果表明:当Sb掺杂量为6mol%、成膜温度为500℃时,薄膜的方阻达到最低(65Ω/□),结构最致密.By using of SnCl4·5H2O and SbCl3 as raw materials, Sb-doped SnO2 thin films were prepared on quartz glass substrate by spraying pyrolysis process. Crystal structure and surface morphology of the thin films were characterized by XRD and AFM. The effect of Sb-doped concentration and deposition temperature on sheet resistance and structure of the thin films were investigated. The results show that the sheet resistance of Sb-doped SnO2 thin films could reach 65 Ω/□ and the structure is densification and uniform, when Sb-doped concentration is 6mol% and the deposition temperature is 500 ℃.

关 键 词：热喷涂法 锑掺杂 二氧化锡薄膜 

分 类 号：TQ171[化学工程—玻璃工业]