AgGa_(1-x)In_xSe_2晶体的定向加工  

Directional Process Method of AgGa_(1-x)In_xSe_2 Crystal

作　　者：龙勇[1] 赵北君[1] 朱世富[1] 何知宇[1] 陈宝军[1] 万书权[1] 王莹[1] 许建华[1] 

机构地区：[1]四川大学材料科学系,成都610064

出　　处：《人工晶体学报》2010年第B06期5-8,12,共5页Journal of Synthetic Crystals

基　　金：教育部博士点基金(No.20040610024)

摘　　要：报道了一种AgGa1-xInxSe2晶体定向加工的新方法,即根据AgGa1-xInxSe2晶体自身解理面,结合晶体标准极图和X射线衍射仪,快速寻找AgGa1-xInxSe2晶体通光面并进行回摆精修的器件加工新方法。运用该方法,针对改进垂直Bridgman法自发成核生长的AgGa1-xInxSe2(x=0.2)晶体,经定向切割、研磨和抛光,初步加工出AgGa1-xInxSe2(x=0.2)晶体光参量振荡(OPO)器件,其相位匹配角θm=54.71°、方位角φ=45°,元件尺寸达8mm×8mm×18mm。新方法不仅定向准确、操作简便,而且可以应用于不同In含量的系列AgGa1-xInxSe2晶体定向加工。A new method about a sort of directional processing of AgGa1-xInxSe2 crystal was presented. Based on the cleavage planes of AgGa1-xInxSe2 single crystal combined with standard pole figure and the X-ray diffraction, light pass surface of the device can be quickly obtained by this new method. Using this method, then via directional cutting, grinding and polishing, the initial optical parametric oscillators （OPO） devices of AgGa1-xInxSe2 （x = 0.2） crystals grown by improved vertical Bridgman method through spontaneous nucleation have been fabricated. Its phase-matched angle θm = 54. 71 °, azimuth angle φ = 45°, and the device size is 8 mm× 8 mm× 18 ram. This method was simple operation and high accuracy, and also can be applied to the directional process of other AgGa1-xInxSe2 crystals with different indium contents.

关 键 词：AgGa1-xInxSe2 定向加工 晶体标准极图 X射线衍射分析 

分 类 号：O786[理学—晶体学]