硒铟镓银单晶体(112)面蚀坑形貌观察  

Observation of Etch Pits Morphology on the (112) Face of AgGa_(0.8)In_(0.2)Se_2 Crystal

作　　者：王莹[1] 朱世富[1] 赵北君[1] 陈宝军[1] 何知宇[1] 万书权[1] 龙勇[1] 

机构地区：[1]四川大学材料科学系,成都610064

出　　处：《人工晶体学报》2010年第B06期81-84,共4页Journal of Synthetic Crystals

基　　金：教育部博士点基金(No.20040610024)

摘　　要：研究出一种能在室温下对AgGa0.8In0.2Se2晶体(112)面进行择优腐蚀的新腐蚀液配方,提出了一种适合AgGa0.8In0.2Se2晶体择优腐蚀的新工艺。采用改进的Bridgman法生长出AgGa0.8In0.2Se2晶体,对晶体进行定向切割出(112)面晶片;然后对晶片进行研磨、机械抛光,使其表面平整无划痕;再将晶片用新腐蚀液,浓HNO3(65%～68%)∶浓HCl(35%～38%)=1∶2.5(体积比),在室温下腐蚀5min,同时进行超声振荡。采用金相显微镜对腐蚀后的晶片表面进行观察,发现清晰的蚀坑形貌,形状近似为正三角形,并对(112)面蚀坑的形成及其形貌成因进行了理论分析。A new etchant was studied out for preferential etching the （112 ） face of AgGa0. 5 In0.2 Se2 crystal at room temperature and a new etching technique was presented. AgGa0.5 In0.2 Se2 crystal was grown by improved Bridgman method and directively cut out the wafer of （112） face from the crystal. Then, the wafer was grinded, mechanically polished, and etched in the etching solution of HNO3 （65% -68% ） ： HCl （35%-38%） = 1：2.5 （volume ratio） for 5 min at room temperature with ultrasonic vibration. The etching pits were clearly observed under the metalloscope. The shape of the etch pits of the （112） face appeared approximately to equilateral triangle. The formation cause of etch pits and the shape on the （112） face were theoretically analyzed.

关 键 词：AgGa0.8In0.2Se2晶体 缺陷 腐蚀液 蚀坑形貌观察 理论分析 

分 类 号：O77[理学—晶体学]