CdS多晶薄膜的制备与光学性质研究  

Preparation and Optical Properties of CdS Polycrystalline Thin Film

作　　者：杨定宇[1] 朱兴华[1] 魏昭荣[1] 孙辉[1] 

机构地区：[1]成都信息工程学院光电技术学院,成都610225

出　　处：《人工晶体学报》2010年第B06期123-126,共4页Journal of Synthetic Crystals

基　　金：国家自然科学基金(No.50902012);四川省应用基础项目(2009JY0087);成都信息工程学院研究项目(CRF200924)

摘　　要：采用电子束蒸发法制备CdS多晶薄膜,研究了衬底温度和退火方式对薄膜光学性质的影响。XRD测试显示,制备样品为六方相多晶结构,沿(002)晶向择优取向生长,在200℃衬底温度时具有最大的择优取向度。对样品的紫外-可见透过谱测试表明,随着衬底温度的升高,薄膜的光吸收边逐渐变陡,光学带隙逐渐增大。退火后,CdS薄膜光吸收边变的更加陡直,光谱透过性能进一步提升,但光学带隙变化很小。此外,制备样品的XRD谱、光吸收边和光学带隙在250℃衬底温度下出现反常变化。同时对上述变化产生的根源进行了分析和讨论。Polycrystalline CdS thin films were prepared by electron beam evaporation（EBE） method, and the effect of substrate temperature and annealing process on the sample optical properties were studied. X-ray diffraction revealed that the sample is polycrystalline structure with preferred growth orientation （002）, known as hexagonal phase, and obtain the greatest degree of preferred orientation as the substrate temperature was 200℃. The optical properties of CdS films were investigated by UV-vis spectrum, the results indicated that the optical absorption edge steepness and optical energy gap of samples gradually increase as the substrate temperature increasing. After air annealing, the film absorption edge becomes more steeper, but the energy gap changed little. In addition, the abnormal changes in XRD pattern, optical absorption edge and energy gap of sample deposited at 250 ~C substrate temperature was observed. The reason for these changes were discussed and analyzed.

关 键 词：CdS多晶薄膜 衬底温度 光吸收边 光学带隙 

分 类 号：TM914.4[电气工程—电力电子与电力传动]