水热法合成In掺杂ZnO晶体  

Synthesis of In-doped ZnO Crystals by Hydrothermal Method

作　　者：韦志仁[1] 刘新辉[1] 武明晓[1] 张金平[1] 尹利君 黄存新 李志强[1] 

机构地区：[1]河北大学物理科学与技术学院,河北省光电信息材料重点实验室,保定071002 [2]中材人工晶体研究院,北京100018

出　　处：《人工晶体学报》2010年第B06期153-155,159,共4页Journal of Synthetic Crystals

基　　金：国家自然科学基金(No.50472037;No.50672020;No.50772027);河北省自然科学基金(E2007000197;E2006001008)

摘　　要：本文采用水热法,在ZnO前驱物中添加少量的In2O3,合成了掺In的ZnO晶体。结果显示:生长的掺In的ZnO晶体呈六角片状,大面积显露{0001}面和负极面-c{000}。In掺杂后晶体的形态得到了明显的改变,使c轴极性快速生长趋向得到明显改善。当采用ZnO晶片为籽晶时,通过水热反应在晶片上生长了一层掺In的ZnO薄膜,通过SEM和光学显微观察,所生长的晶体表面光滑平整,双晶衍射摇摆曲线半宽度小于39弧秒,显示具有较高的晶体质量。In-doped ZnO crystals were synthesized by hydrothermal method through adding In2O3 to ZnO. The results indicated that the In-doped ZnO had shape of hexagonal slice. The positive polar face ＋ c {0001 } and negative polar -c { 0001 │ was also exposed. The shape of In-doped ZnO was obviously improved, the rate of growth along c-axie was weakened apparently. As the ZnO slice was used as seed crystal, In-doped ZnO film was fabricated on crystal slice by hydrothermal method. SEM and optical microscopic observation showed the growth of the crystal surface is smooth, double-crystal diffraction rocking curve half-width is less than 39 aresec, indicating the synthesized crystal have high quality.

关 键 词：氧化锌晶体 水热法 IN2O3 摇摆曲线 

分 类 号：TN304.21[电子电信—物理电子学]