氮化镓生长反应模型与数值模拟研究(I)  

Reaction Model and Numerical Simulation of Gallium Nitride Growth(I)

作　　者：王国斌[1] 张永红[1] 王怀兵[1] 

机构地区：[1]中国科学院苏州纳米技术与纳米仿生研究所,苏州215125

出　　处：《人工晶体学报》2010年第B06期160-163,共4页Journal of Synthetic Crystals

摘　　要：对氮化镓(GaN)生长的化学反应过程进行了全面的阐述。从两条基本的反应路径出发,对各反应的机理进行了剖析,并结合近期的研究发现,提出了MOCVD生长GaN的核心反应模型。该化学反应动力学模型综合考虑了有效气相反应和表面反应,适用范围广且计算成本较小,为预测GaN薄膜的生长速率提供了一种精简的计算方法。The reaction process of gallium nitride （GaN） growth was elucidated in details. According to the two basic reaction pathways, the mechanisms of all reactions were analyzed. The core reaction model of GaN growth in MOCVD was proposed with the help of the newly experimental observation. This reaction kinetic model was supposed to be universal, for it mainly included the effective phase reactions and surface reactions. Besides, the computation cost less, which provided a convenient method in predicting the growth rate of GaN film.

关 键 词：GAN生长 反应模型 反应路径 化学反应动力学 

分 类 号：TB332[一般工业技术—材料科学与工程]