SOI DTMOS温度特性研究  

Study on Temperature Characteristics of SOI DTMOS

作　　者：毕津顺[1] 韩郑生[1] 海潮和[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《半导体技术》2010年第7期661-663,共3页Semiconductor Technology

基　　金：国家重点基础研究子课题(2006CB302701)

摘　　要：对比研究了20μm/0.35μm的SOI（绝缘体上硅）普通MOS和DTMOS（动态阈值MOS）的温度特性。从20-125℃,普通MOS驱动电流减小了12.2%,而DTMOS驱动电流增大了65.3%。SOI DTMOS降低了垂直沟道方向的电场,减少了载流子表面散射,因此阈值电压随温度减小占主导,驱动电流随着温度升高而增大。SOI DTMOS优秀的温度特性,使之非常适合于低压、低功耗、高温应用。The temperature characteristics of common MOS with 20 μm/0.35 μm SOI and DTMOS are studied.From 20 ℃ to 125 ℃,drive current of common MOS is reduced by 12.2%,but it is increased by 65.3% of DTMOS.The electric field perpendicular to the channel in DTMOS is reduced and the surface scattering of carrier is decreased.Therefore the decrease of threshold voltage with temperature elevating gradually is dominant,so that the drive current increases with the elevating temperature.Therefore,SOI DTMOS with excellent temperature characteristics is suitable for low power and high temperature applications.

关 键 词：绝缘体上硅 动态阈值晶体管 温度特性 

分 类 号：TN386[电子电信—物理电子学]