一种输出可调CMOS带隙基准电压源的设计  

CMOS Bandgap Reference Design with Adjustable Output

作　　者：王永顺[1] 史琳[1] 王好德[1] 

机构地区：[1]兰州交通大学电子与信息工程学院,兰州730070

出　　处：《半导体技术》2010年第7期736-739,共4页Semiconductor Technology

基　　金：甘肃省科技支撑计划项目(097GKCA052)

摘　　要：传统设计中平衡温度时的带隙基准电压值是与工艺相关联的定值。主要基于通用的带隙技术讨论在CMOS工艺中基准产生的设计,在对基准产生原理与传统电路结构分析的基础上,设计出一种高PSRR输出可调带隙基准电压源。电路综合温度补偿、电流反馈和电阻分压技术,采用CSMC 0.5μm CMOS混合信号工艺实现,并用Cadence的Spectre进行了仿真优化。仿真结果表明,带隙基准电压源在-15~80℃范围内输出为603.5 mV时的温度系数为6.84×10-6/℃,在1.8~5 V电路均可正常工作。流片后的测试结果验证了该方法的可行性,基准电压中心值可宽范围调整,各项性能参数满足设计要求。The bandgap reference voltage at equilibrium temperature is a constant associated with the process in traditional design.The design of reference generation in the CMOS process based on common bandgap technology is discussed.A high-precision bandgap voltage reference with adjustable output based on the analysis of reference generation theory and the traditional circuit structure was designed.The circuit was realized considering temperature compensation,current feedback and resistive subdivision technology using CSMC 0.5 μm CMOS mixed-signal process.The simulation results carried out and optimized by using Cadence＇s Spectre show that the bandgap reference has a temperature coefficient of 6.84×10-6/℃ with the output voltage of 603.5 mV in-15-80 ℃ and the circuit can work well in 1.8-5 V.Test results prove the feasibility of this method,the central value of the reference voltage source is adjustable in a wide range,and the performance parameters meet the design requirements.

关 键 词：互补金属氧化物半导体 带隙基准 输出可调 温度系数 电源抑制比 

分 类 号：TN432[电子电信—微电子学与固体电子学]