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作 者:裴明德[1] 王波[1] 张雪红[1] 李耳[1] 宋雪梅[1] 严辉[1]
出 处:《真空科学与技术学报》2010年第4期450-454,共5页Chinese Journal of Vacuum Science and Technology
基 金:北京市自然科学基金(2062004)
摘 要:通过化学反应和低气压氧化两步法,在不用低表面能有机物修饰的情况下,在铜表面成功制备了一层超疏水薄膜,其表面的接触角可达到151°,滚动角小于10°。用扫描电镜、接触角测量仪、X射线衍射仪、能谱分析等技术对超疏水表面进行了表征和分析。X射线衍射结合能谱分析表明,铜表面的花状结构为氢氧化铜,底层为氧化铜和未分解的氢氧化铜的混合组织。扫描电镜对铜表面形貌观察显示,该表面存在微米-纳米尺度双层复合结构:上层为花状结构,底层为纳米片状结构。研究显示双层的微纳复合结构和表面花状结构的分布密度是形成超疏水的关键因素。A novel surface modification technique was successfully developed to significantly enhance the hydrophobicity of copper.In the technique,the carefully-cleaned copper disk was first immersed in a mixed solution of 2 mol/L KOH and 0.1 mol/L K_2S_2O_4 for 15 min.at 60 ℃,and then,it was oxidized in a pressure of 1 Pa at an evaluated temperature for 1~5 h.The microstructures and hydrophobicity of the copper surface,before and after surface modification,were characterized with X-ray diffraction,energy dispersive spectroscopy,scanning electron microscopy and contact angle measurement.The results show that the surface modification results in formation of a bi-layer:a pedal-shaped micrograins of copper hydroxide layer on top of the laminar-shaped nano-grains of copper oxide and/or residue copper-hydroxide,and that the composite layer results in a super-hydrophobic surface,with a contact angle up to 150°,and a sliding angle less than 10°.The possible mechanism was tentatively discussed.
分 类 号:TN304[电子电信—物理电子学]
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