基于Si-rich SiN_x/N-rich SiN_y多层膜结构的量子点构筑及发光特性  

Fabrication and luminescence properties of Si quantum dots based on Si-rich SiN_x /N-rich SiN_y multilayer

作　　者：黄锐[1,2] 王旦清[1] 宋捷[2] 丁宏林[2] 王祥[2] 郭艳青[2] 陈坤基[1] 徐骏[1] 李伟[1] 马忠元[1] 

机构地区：[1]南京大学物理系固体微结构物理国家重点实验室,南京210093 [2]韩山师范学院物理与电子工程系,潮州521041

出　　处：《物理学报》2010年第8期5823-5827,共5页Acta Physica Sinica

基　　金：国家重点基础研究发展计划(批准号:2006CB932202,2007CB613401);国家自然科学基金(批准号:60806046)资助的课题~~

摘　　要：利用等离子体增强化学气相沉积法制备Si-rich SiNx/N-rich SiNy多层膜,分别使用热退火和激光辐照技术对多层膜进行退火,以构筑三维限制、尺寸可控、有序的硅纳米晶.实验结果表明,经退火后,纳米硅晶粒在Si-rich SiNx子层内形成,其尺寸可由Si-rich SiNx子层厚度调控.实验还发现,激光辐照技术相比于热退火能更有效地改善多层膜的微结构,提高多层膜的晶化率,以激光技术诱导晶化的Si-rich SiNx/N-rich SiNy多层膜作为有源层构建电致发光器件,在室温下观察到了增强的电致可见发光,并且发光效率较退火前提高了40%以上.SiN-based multilayers were prepared in a plasma enhanced chemical vapor deposition system followed by subsequently thermal annealing and laser irradiation with the aim of fabrication three-dimensional constrained,size-controlled and well- regulated Si nanocrystals. The experimental results show that Si nanocrystals grow in the Si-rich SiN sublayer. Furthermore,the grain size can be controlled according to the thick of Si-rich SiN. It is also found that the crystalline fraction of the multilayers irradiated by laser is significantly higher than that by thermal annealing. The devices that employing the laser-irradiated multilayer as luminescent active layer exhibit an enhanced visible electroluminescence and the external quantum efficiency is improved by 40% in comparison with the device without annealing.

关 键 词：氮化硅 多层膜 限制结晶 纳米晶硅 

分 类 号：O471.1[理学—半导体物理]