Sub-nanosecond optical switch based on silicon racetrack resonator  被引量:1

Sub-nanosecond optical switch based on silicon racetrack resonator

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作  者:徐海华 黄庆忠 李运涛 俞育德 余金中 

机构地区:[1]State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences [2]Wuhan National Laboratory for Optoelectronics,Huazhong University of Science and Technology

出  处:《Chinese Physics B》2010年第8期437-441,共5页中国物理B(英文版)

基  金:Project supported by the National Natural Science Foundation of China(Grant No.60877036);the National Basic Research Program of China(Grant No.2006CB302803);the State Key Laboratory of Advanced Optical Communication Systems and Networks,China(Grant No.2008SH02);the Knowledge Innovation Program of Institute of Semiconductors,Chinese Academy of Sciences(Grant No.ISCAS2008T10)

摘  要:We experimentally demonstrate a small-size and high-speed silicon optical switch based on the free carrier plasma dispersion in silicon. Using an embedded racetrack resonator with a quality factor of 7400, the optical switch shows an extinction ratio exceeding 13 dB with a footprint of only 2.2 × 10-3 mm^2. Moreover, a novel pre-emphasis technique is introduced to improve the optical response performance and the rise and the fall times are reduced down to 0.24 ns and 0.42 ns respectively, which are 25% and 44% lower than those without the pre-emphasis.We experimentally demonstrate a small-size and high-speed silicon optical switch based on the free carrier plasma dispersion in silicon. Using an embedded racetrack resonator with a quality factor of 7400, the optical switch shows an extinction ratio exceeding 13 dB with a footprint of only 2.2 × 10-3 mm^2. Moreover, a novel pre-emphasis technique is introduced to improve the optical response performance and the rise and the fall times are reduced down to 0.24 ns and 0.42 ns respectively, which are 25% and 44% lower than those without the pre-emphasis.

关 键 词:RESONATOR SILICON-ON-INSULATOR optical switch pre-emphasis technique 

分 类 号:TN256[电子电信—物理电子学]

 

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