云南高校图书馆联盟文献共享服务平台- SILICON-ON-INSULATOR

SILICON-ON-INSULATOR: 作品数：182被引量：148H指数：5; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：夏金松宇高胜之袁树中张伟刚开桂云更多>>; 相关机构：中国科学院早稻田大学南开大学复旦大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划国家高技术研究发展计划中国博士后科学基金更多>>

Photo-driven fin field-effect transistors: 《Opto-Electronic Science》2024年第5期12-20,共9页Jintao Fu Chongqian Leng Rui Ma Changbin Nie Feiying Sun Genglin Li Xingzhan Wei; supported by the National Key R&D Program of China(2017YFE0131900);the Natural Science Foundation of Chongqing,China(CSTB2023NSCQ-LZX0087);the National Natural Science Foundation of China(62204242,62005182).; The integration between infrared detection and modern microelectronics offers unique opportunities for compact and high-resolution infrared imaging.However,silicon,the cornerstone of modern microelectronics,can only d...; 关键词：PHOTODETECTION SILICON-ON-INSULATOR lead sulfide HETEROSTRUCTURE field-effect transistors

On-chip stimulated Brillouin scattering[Invited]被引量：1: 《Chinese Optics Letters》2024年第2期28-41,共14页余林峰黄楚坤程铭王康石浩天黄强孙军强; supported by the National Natural Science Foundation of China(Nos.61875063 and 62175074)。; On-chip stimulated Brillouin scattering(SBS)has attracted extensive attention by introducing acousto-optic coupling interactions in all-optical signal processing systems.A series of chip-level applications such as Bri...; 关键词：stimulated Brillouin scattering integrated photonics SILICON-ON-INSULATOR

Analytical workload dependence of self-heating effect for SOI MOSFETs considering two-stage heating process: 《Chinese Physics B》2023年第9期522-529,共8页李逸帆倪涛李晓静王娟娟高林春卜建辉李多力蔡小五许立达李雪勤王润坚曾传滨李博赵发展罗家俊韩郑生; Dynamic self-heating effect(SHE)of silicon-on-insulator(SOI)MOSFET is comprehensively evaluated by ultrafast pulsed I-V measurement in this work.It is found for the first time that the SHE complete heating response an...; 关键词：self-heating effect(SHE) silicon-on-insulator(SOI)MOSFETs thermal transient response WORKLOAD

Inverse design of a Si-based high-performance vertical-emitting meta-grating coupler on a220 nm silicon-on-insulator platform被引量：1: 《Photonics Research》2023年第6期897-905,共9页JINHYEONG YOON JAE-YONG KIM JUNHYEONG KIM HYEONHO YOON BERKAY NESELI HYO-HOON PARK HAMZA KURT; National Research Foundation of Korea(NRF-2022R1A2C1009773);Ministry of Education(BK Four Program);Ministry of Science and ICT,Republic of Korea(N11220016)。; Efficient extraction of light from a high refractive index silicon waveguide out of a chip is difficult to achieve.An inverse design approach was employed using the particle swarm optimization method to attain a verti...; 关键词：WAVEGUIDE coupling INSULATOR

Gate-tunable high-performance broadband phototransistor array of two-dimensional PtSe_(2) on SOI被引量：4: 《Nano Research》2023年第5期7559-7567,共9页Yexin Chen Qinghai Zhu Xiaodong Zhu Yijun Sun Zhiyuan Cheng Jing Xu Mingsheng Xu; the National Natural Science Foundation of China(Nos.62090030/62090031,51872257,51672244,and 62274145);the National Key R&D Program of China(No.2021YFA1200502);the Natural Science Foundation of Zhejiang Province(No.LZ20F040001);the Zhejiang Province Key R&D Pprogram(No.2020C01120).; Two-dimensional(2D)layered materials have attracted extensive research interest in the field of high-performance photodetection due to their high carrier mobility,tunable bandgap,stability,other excellent properties.H...; 关键词：two-dimensional PtSe_(2) silicon-on-insulator(SOI) HETEROJUNCTION PHOTOTRANSISTOR gate voltage modulation

High linearity U-band power amplifier design:a novel intermodulation point analysis method被引量：3: 《Frontiers of Information Technology & Electronic Engineering》2023年第1期176-186,共11页Jie CUI Peipei LI Weixing SHENG; Project supported by the National Natural Science Foundation of China(No.62001232)。; A power amplifier’s linearity determines the emission signal’s quality and the efficiency of the system.Nonlinear distortion can result in system bit error,out-of-band radiation,and interference with other channels,...; 关键词：CMOS silicon-on-insulator(SOI) Linearity analysis Milimeter wave(mm-Wave) Power amplifier

Temperature insensitive multi-channel light amplification systems on SOI platform: 《Chinese Optics Letters》2022年第8期29-35,共7页Junhu Zhou Jie You Hao Ouyang Runlin Miao Xiang’ai Cheng Tian Jiang; This work was supported by the National Natural Science Foundation of China(No.11902358);the Scientific Researches Foundation of National University of Defense Technology(Nos.ZK18-03-36 and ZK18-01-03).; We present a theoretical analysis of a novel multi-channel light amplification photonic system on chip,where the nonlinear Raman amplification phenomenon in the silicon(Si)wire waveguide is considered.Particularly,a c...; 关键词：SILICON-ON-INSULATOR MULTI-CHANNEL AMPLIFICATION TEMPERATURE

A controllable fabrication improved silicon nanowire array sensor on(111)SOI for accurate bio-analysis application: 《Nano Research》2022年第8期7468-7475,共8页Zicheng Lu Hong Zhou Yi Wang Yanxiang Liu Tie Li; the support from the National Key Research and Development Program of China(Nos.2018YFA0208500 and 2017YFA0207103).; Silicon nanowire field-effect transistor(SiNW-FET)sensors possess the ability of rapid response,real-time,and label-free detection with high sensitivity and selectivity in the analysis of charged molecules.Their nano-...; 关键词：silicon nanowire TOP-DOWN (111)silicon-on-insulator triangular cross-section quantitative detection

Thermo-optic phase shifters based on silicon-on-insulator platform: state-of-the-art and a review被引量：7: 《Frontiers of Optoelectronics》2022年第1期92-112,共21页Shengping Liu Junbo Feng Ye Tian Heng Zhao Li Jin Boling Ouyang Jiguang Zhu Jin Guo; This work was supported by Chuan-Yu Cooperation Project(No.Cstc2020jscx-cy1hX0006);Chongqing Science and Technology Commission of China(Grant No.cstc2020jscx-msxm0099 and cstc2020jscx-msxm0100);Chongqing Natural Science Foundation of China(No.cstc2020jcyj-msxm3725).; Silicon photonic platforms offer relevance to large markets in many applications,such as optical phased arrays,photonic neural networks,programmable photonic integrated circuits,and quantum computation devices.As one ...; 关键词：Thermo-optic phase shifter Photonic integrated circuits(PICs) Optical switches Silicon photonics

Impact of STI indium implantation on reliability of gate oxide: 《Chinese Physics B》2022年第2期671-676,共6页Xiao-Liang Chen Tian Chen Wei-Feng Sun Zhong-Jian Qian Yu-Dai Li Xing-Cheng Jin; The impacts of shallow trench isolation(STI)indium implantation on gate oxide and device characteristics are studied in this work.The stress modulation effect is confirmed in this research work.An enhanced gate oxide ...; 关键词：SILICON-ON-INSULATOR shallow trench isolation(STI)implantation gate oxide reliability

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