Photo-driven fin field-effect transistors  

作　　者：Jintao Fu Chongqian Leng Rui Ma Changbin Nie Feiying Sun Genglin Li Xingzhan Wei 

机构地区：[1]Chongqing Institute of Green and Intelligent Technology,Chinese Academy of Sciences,Chongqing 400714,China [2]University of Chinese Academy of Sciences,Beijing 100049,China [3]Chongqing School,University of Chinese Academy of Sciences,Chongqing 400714,China

出　　处：《Opto-Electronic Science》2024年第5期12-20,共9页光电科学（英文）

基　　金：supported by the National Key R&D Program of China(2017YFE0131900);the Natural Science Foundation of Chongqing,China(CSTB2023NSCQ-LZX0087);the National Natural Science Foundation of China(62204242,62005182).

摘　　要：The integration between infrared detection and modern microelectronics offers unique opportunities for compact and high-resolution infrared imaging.However,silicon,the cornerstone of modern microelectronics,can only detect light within a limited wavelength range(<1100 nm)due to its bandgap of 1.12 eV,which restricts its utility in the infrared detection realm.Herein,a photo-driven fin field-effect transistor is presented,which breaks the spectral response constraint of conventional silicon detectors while achieving sensitive infrared detection.This device comprises a fin-shaped silicon channel for charge transport and a lead sulfide film for infrared light harvesting.The lead sulfide film wraps the silicon channel to form a“three-dimensional”infrared-sensitive gate,enabling the photovoltage generated at the lead sulfide-silicon junction to effectively modulate the channel conductance.At room temperature,this device realizes a broadband photodetection from visible(635 nm)to short-wave infrared regions(2700 nm),surpassing the working range of the regular indium gallium arsenide and germanium detectors.Furthermore,it exhibits low equivalent noise powers of 3.2×10^(-12) W·Hz^(-1/2) and 2.3×10^(-11) W·Hz^(-1/2) under 1550 nm and 2700 nm illumination,respectively.These results highlight the significant potential of photo-driven fin field-effect transistors in advancing uncooled silicon-based infrared detection.

关 键 词：PHOTODETECTION SILICON-ON-INSULATOR lead sulfide HETEROSTRUCTURE field-effect transistors 

分 类 号：TN386[电子电信—物理电子学]