BJT等效电路模型的发展  

Advanced Compact Models for BJT

作　　者：罗杰馨[1] 陈静[1] 伍青青[1] 肖德元 王曦[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所,信息功能材料重点实验室,上海200050

出　　处：《电子器件》2010年第3期308-316,共9页Chinese Journal of Electron Devices

基　　金：“极大规模集成电路制造装备及成套工艺”国家重大专项子课题“0.13μm SOI工艺仿真及器件建模”资助(2009ZX02306-002)

摘　　要：随着BJT尺寸的缩小以及BJT广泛应用于高速和RF电路,有效及准确的BJT电路设计要求更加精确的等效电路模型。通过介绍模型的基本原理及其对BJT器件关键物理效应的模拟,描述不同模型开发者采用的方式,结合仿真结果分析不同模型的特点。主要从以下几个方面展开:模型的大信号等效电路图;归一化电荷的计算,转移电流表达式;晶体管二阶效应模型,包括基区宽度调制效应(即Early效应)、大注入效应等;大电流条件下的Kirk效应,准饱和效应等。The combination of decreasing BJT dimensions and increasing use of BJT for high speed and RF application has created the need for advanced compact models for BJT circuit design.We provide an overview of the basic physics that must be modeled to build a compact model for the BJT and describe the approaches taken by the developers who advanced several models.The characteristics of the models are demonstrated by way of comparison of simulated and measured device data.In detail,we will consider the following important points： equivalent circuit,transfer current calculation,Early effects,high injection,Kirk effects,transit time calculation.

关 键 词：等效电路模型 BJT BJT模型 HICUM模型 电荷控制理论 

分 类 号：TN322.8[电子电信—物理电子学]