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作 者:王雪敏[1] 吴卫东[1] 李盛印[2] 陈松林[1] 唐永建[1] 白黎[1] 王海平[2]
机构地区:[1]中国工程物理研究院,四川绵阳621900 [2]四川大学,四川成都610065
出 处:《稀有金属材料与工程》2010年第7期1251-1255,共5页Rare Metal Materials and Engineering
基 金:中国工程物理研究院重大基金资助课题(2005Z0805)
摘 要:采用氟化氪(KrF)脉冲准分子激光烧蚀沉积(PLD)技术,在硅基体表面制备不同掺W时间的类金刚石薄膜(W-DLC)。利用AFM、XRD、Raman、纳米压痕等手段分析和研究薄膜的表面形貌、结构以及部分性能。结果表明:W掺入后形成了α-W2C和WC相,并且没有明显改变薄膜中sp2和sp3键的含量,薄膜的表面粗糙度基本不受W掺入时间的影响,残余应力降低约1个数量级(二十几个GPa下降到几个GPa),硬度和弹性模量随W掺入时间的增加而逐渐降低。Diamond-like carbon films (DLC) doped with W for different time on Si substrate surface were prepared by KrF pulsed excimer laser ablution deposition (PLD) technique. The surface morphology,microstructure and some properties of the films were researched by AFM,XRD,Raman spectra and nano indenter. Results show that α-W2C and WC phases were formed after W doping,but the content of sp^2 and sp^3 in the film did not change obviously. The surface roughness was not sensitive to the W doping time. W doping resulted in the decrease of the residual stress by a magnitude (from higher than 20 GPa to several GPa). Meanwhile,the hardness and modulus of the films were decreased with increasing of W doping time.
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