MgO缓冲层上钡铁氧体(BaFe_(12)O_(19))薄膜的制备与性能研究  

Growth and magnetic properties research of barium ferrite(BaFe_(12)O_(19)) films on MgO buffer

作　　者：丁关凤[1] 朱俊[1] 王水力[1] 张菲[1] 罗文博[1] 

机构地区：[1]电子科技大学,电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《功能材料》2010年第7期1130-1133,共4页Journal of Functional Materials

基　　金：国家重点基础研究发展计划(973计划)资助项目(61363);国家自然科学基金资助项目(50772019)

摘　　要：采用脉冲激光沉积(PLD)技术在(0006)取向的蓝宝石基片上,通过MgO缓冲层诱导生长了BaFe12O19(BaM)薄膜,研究了沉积温度对BaM薄膜的晶体结构和磁性能的影响规律。X射线衍射(XRD)分析结果表明,在激光脉冲频率6Hz、激光能量180mJ、MgO缓冲层的厚度50nm和沉积温度为750℃的条件下,制得的BaM薄膜c轴取向最好,其(0008)面的ω摇摆曲线半高宽(FWHM)仅为0.289°。扫描电子显微镜(SEM)结果显示此时薄膜的晶粒已有部分呈六角片状。振动样品磁强计(VSM)测试表明,在750℃时沉积的BaM薄膜面外饱和磁化强度为190A/m,剩磁比0.82,薄膜磁性能良好。Barium ferrite（BaFe12O19 ） thin films have been grown on（0006）-oriented sapphire substrates with MgO buffer by pulsed laser deposition（PLD）.The effect of substrate temperature on microstructure and magnetic properties were studied.X-ray diffraction studies show that excellent c axis oriented BaM films on sapphire substrates were obtained.And the optimum conditions were found to be as follows：deposition rate 6Hz,pulse laser energy intensity 180mJ/pulse,MgO thickness 50nm and growth temperature 750℃,excellent c axis oriented BaM film was observed,the full width at half maximum（FWHM） of （0008） rocking curve is 0.289°of BaM film,indicating that the film is of a good quality.Scan electron micro-scope（SEM） analysis showed that thin BaM films have a few of hexangular grains when growth temperature reached 750℃.Vibrate sample magnetometer investigation showed that the perpendicular saturation magnetism and squareness（SQ=Mr/Ms） for the BaM/MgO/Al2O3 sample fabricated at 750℃ are 190A/m and 0.82,respectively.Thus,the obtained BaM thin films with the high crystalline quality and good magnetic property in our work is helpful to study the fabrication of thick films and related devices.

关 键 词：脉冲激光沉积(PLD) BaM薄膜 MgO缓冲层 面外磁性能 

分 类 号：TN385[电子电信—物理电子学]