退火温度对Ta掺杂ITO薄膜性能的影响  

Influence of annealing temperature on properties of tantalum-doped indium tin oxide films

作　　者：黄俊毅[1] 范广涵[1] 章勇[1] 

机构地区：[1]华南师范大学光电子材料与技术研究所,广东广州510631

出　　处：《材料热处理学报》2010年第7期25-29,共5页Transactions of Materials and Heat Treatment

基　　金：粤港关键领域重点突破项目(2007A010501008);广东省教育部产学研结合项目(2009B09030038);教育部博士点基金项目(2007498351)

摘　　要：利用电子束蒸发技术在玻璃衬底上沉积了Ta掺杂ITO(ITO∶Ta)薄膜,对比研究了在不同退火温度下ITO∶Ta和ITO薄膜表面形貌、方阻、载流子浓度、霍尔迁移率和透光率的变化情况。结果表明,随着退火温度的上升,ITO∶Ta薄膜的晶化程度不断提高,并获得较低的表面粗糙度。在合适的退火温度下,ITO∶Ta薄膜的光电性能也有显著的改善。当在氮气氧气氛围下经过500℃退火时,ITO∶Ta薄膜得到最佳的综合性能,表面均方根粗糙度为2.17 nm,方阻为10～20Ω,在440 nm的透光率可达98.5%。Tantalum-doped indium tin oxide（ITO∶ Ta） thin films were deposited by the electron-beam evaporation technique with an ITO target containing 0.2 wt% tantalum.The effect of annealing temperature on surface morphology,sheet resistance,carrier concentration,hall mobility and transmittance of both ITO∶ Ta and ITO thin films was investigated in detail.The results show that ITO∶ Ta thin films exhibit a higher degree of crystallization and lower surface roughness with increasing annealing temperature.Reasonable annealing temperature can remarkably improve the electrical and optical properties of ITO∶ Ta thin films.ITO∶ Ta thin films annealed at 500 ℃ under O2 ＋ N2 ambient have the best comprehensive properties,including a root mean square roughness of 2.17 nm,a sheet resistance of 10 ～ 20 Ω and a transmittance of 98.5% at 440 nm.

关 键 词：ITO薄膜 掺杂 电子束蒸发 退火温度 

分 类 号：TB383[一般工业技术—材料科学与工程] O484.4[理学—固体物理]