应变量子阱中杂质态结合能的压力效应  

Pressure effect on the binding energies of donors in strained GaN/AlGaN quantum well

作　　者：温淑敏[1] 赵春旺[1] 王细军 

机构地区：[1]内蒙古工业大学理学院物理系,内蒙古呼和浩特010051 [2]内蒙古乌兰察布电视台,内蒙古集宁012000

出　　处：《功能材料》2010年第A01期97-100,104,共5页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(10862002);内蒙古工业大学校基金资助项目(X200834)

摘　　要：对应变闪锌矿(001)取向GaN-AlxGa1-xN量子阱系统,采用变分法讨论了流体静压力对束缚于界面附近的浅杂质态结合能的影响。计算结果表明,考虑压力对单轴、双轴应变的调制及电子有效质量,材料介电常数及禁带宽度的影响,杂质态的结合能随压力呈线性变化。由简化相干势近似法讨论了垒材料AlxGa1-xN中Al组分对杂质态结合能的影响。结果表明,在阱宽和压力固定时,当Al组分增加时杂质态结合能会逐渐增加;且压力较大时结合能随组分的增加更加显著。Al组分的增加使电子的二维特性增强,从而使结合能增大。The pressure effect of the donors binding energies in strained（001） oriented zinc-blende AlxGa1-x N quantum wells with finite barriers are investigated with a variational method.The result indicatesthat the binding energies of the donors increase nearly linearly with pressure,even as the modification of strain by hydrostatic pressure and the variations of the electronic effective mass,dielectric constants,and conduction band offset between the well and barriers with hydrostatic pressure is considered.In addition,a simplified coherent potential approximation is used to calculate the influence of Al component in ternary mixed crystal AlxGa1-xN on the binding energies of the donors.The results show that the binding energy increases with Al component under a fixed pressure and.Furthermore the increase of exciton binding energy is more obvious under a higher pressureas increase of Al component.

关 键 词：GaN-AlxGa1-xN量子阱 杂质态 结合能 压力 应变 

分 类 号：O471.3[理学—半导体物理]