以ZnO为缓冲层制备硅基氮化镓薄膜  

Fabrication of GaN films on ZnO buffer layer deposited on Si(111) substrates

作　　者：何建廷[1] 宿元斌[1] 杨淑连[1] 卢恒炜[1] 

机构地区：[1]山东理工大学电气与电子工程学院,山东淄博255049

出　　处：《功能材料》2010年第A01期162-164,共3页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(90301002)

摘　　要：用脉冲激光沉积法(PLD)先在600℃的Si(111)衬底上沉积ZnO薄膜,然后用磁控溅射法再沉积GaN薄膜。直接沉积得到的GaN薄膜是非晶结构,将样品在氨气氛围中在850、900、950℃下退火15min得到结晶的GaN薄膜。用X射线衍射(XRD)、傅立叶红外吸收谱(FTIR)、光致发光谱(PL)和扫描电子显微镜(SEM)研究了ZnO缓冲层对GaN薄膜的结晶和形貌的影响。ZnO thin films were first deposited on n-Si（111） at substrate temperatures of 600℃ by PLD.Then GaN thin films were grown on ZnO/Si by R.F.magnetron sputtering system.The as-deposited GaN films were amorphous.Crystalline GaN films were prepared when the samples were annealed in NH3 ambient at 850,900 and 950℃ for 15min.X-ray diffraction（XRD）,Fourier transform infrared spectrophotometer（FTIR）,photoluminescence（PL） and scanning electron microscope（SEM） were used to analyze the effects of the ZnO buffer layer on the crystallization and morphology of GaN thin films.

关 键 词：ZnO缓冲层 GAN薄膜 退火 结晶 

分 类 号：TN304[电子电信—物理电子学]