新型无氰电镀工艺制备Au-Bi合金靶  

Preparation of Au-Bi Alloy Target by New Cyanide-Free Plating Process

作　　者：王松[1] 戴亚堂[1] 张欢[1] 张红强[1] 

机构地区：[1]西南科技大学材料科学与工程学院,四川绵阳621010

出　　处：《原子能科学技术》2010年第7期785-789,共5页Atomic Energy Science and Technology

基　　金：国家高技术研究发展计划资助项目(2008AAxxx0810);西南科技大学博士基金资助项目(08zx0101)

摘　　要：提出一种无氰碱性镀液体系制备Au-Bi合金微靶的脉冲电沉积方法。采用亚硫酸盐-酒石酸盐镀液体系,通过调控镀液成分及脉冲参数,有效控制合金组分(铋含量控制在1.5%～9.5%),实现了金、铋的共沉积;同时研究了温度、电流密度及铋的浓度等对合金含量和镀层表面形貌的影响。通过实验获得制备合金微靶的最佳配方及工艺参数为:氯化铋6g/100mL,金0.15g/100mL,酒石酸钾钠12.50g/100mL,氨水0.85mL/100mL,亚硫酸铵6.50mL/100mL,氯化钾5.00g/100mL,柠檬酸钾5.50g/100mL,十二烷基硫酸钠0.002g/100mL,酒石酸锑钾0.035g/100mL;频率500Hz,平均电流65μA,占空比1∶7,温度45℃。根据上述配方及工艺参数,制备出了表面平整均匀、外观光亮、成分可控的Au-Bi合金柱腔靶。In this study,pulse electro-deposition method of Au-Bi alloy micro-target preparation was advanced by a cyanide-free alkaline plating system.The alloy composition can be effectively controlled（controlling of bismuth content from 1.5% to 9.5%）by the regulation of bath composition and pulse parameters,the using of sulfite-tartrate salt bath system.And the deposition of bismuth and gold was achieved.At the same time,impacting of temperature,current density and the concentration of bismuth on the content of alloy and surface morphology of coatings were researched.And optimal formula and process parameters of preparation of alloy micro-target were obtained through experiments.The corresponding optimum concentrations are as follows：Bismuth chloride 6 g/100 mL,gold 0.15 g/100 mL,potassium sodium tartrate 12.50 g/100 mL,ammonia 0.85 mL/100 mL,ammonium sulfite 6.50 mL/100 mL,kalium chloride 5.00 g/100 mL,potassium citrate 5.50 g/100 mL,SDS 0.002 g/100 mL,antimony potassium tartrate 0.035 g/100 mL,frequency 500 Hz,average current 65 μA,duty ratio 1∶7,temperature 45 ℃.And Au-Bi alloy micro-targets possess properties such as plane and bright surface,low porosity according to above optimal formular and process parameters.

关 键 词：无氰 脉冲电镀 Au-Bi合金 

分 类 号：TQ153.1[化学工程—电化学工业]