双色制导用InGaAs探测器低温特性的研究  

LOW TEMPERATURE CHARACTERISTIC OF InGaAs DETECTOR EMPLOYED IN DUAL-BAND IR GUIDING SYSTEM

作　　者：孟庆端[1,2] 吕衍秋[2] 鲁正雄[2] 孙维国[2] 

机构地区：[1]河南科技大学电子信息工程学院,河南洛阳71003 [2]中国空空导弹研究院,河南洛阳471009

出　　处：《低温物理学报》2010年第4期295-298,共4页Low Temperature Physical Letters

摘　　要：制备了平面结InGaAs短波红外探测器,分别测量了其在室温及液氮温区的响应光谱、电流～电压曲线和光生信号及噪声,发现其光生信号与室温测量值相比下降了大约50%.在液氮温区的测试结果表明,短波探测器的峰值响应率为Rvp=2.41(107V/W),峰值探测率Dp*=1.51(1012(cmHz)1/2/W.其透射谱的测量表明该探测器的透射率能够超过80%.这些指标能够满足红外双色探测系统的需求。Planar InGaAs/InP PIN photodiodes have been successfully fabricated,and its spectral response,I～V characteristic,photogenerated signal and noise were measured at both room temperature and liquid nitrogen with the blackbody temperature fixed at 900K.It was found that the measured voltages signal reduced from14mV to 7mV.The measured results at 77Kshown that the peak voltage responsivity of InGaAs detector is Rvp=2.41（107V/W）,the peak detectivity Dp＊ =1.51（1012（cmHz）1/2/W.The results drawn from transmittance spectral measurement indicated that the transmittance rate is over 80% at mid-wave range.All these parameters can satisfy the requirements of the dual band infrared applied systems.

关 键 词：双色探测器 INGAAS 探测率 

分 类 号：TN215[电子电信—物理电子学]