一种基于MEMS传感器基准电流源设计  

Design of a new reference current source based on MEMS sensor

作　　者：赵良[1] 陈向东[1] 苏长远[1] 葛林[1] 

机构地区：[1]西南交通大学信息科学与技术学院,四川成都610031

出　　处：《电子技术应用》2010年第8期70-72,76,共4页Application of Electronic Technique

基　　金：国家自然科学基金资助项目(60572026);(60871024);教育部新世纪优秀人才支持计划支持项目(A0160419950120)

摘　　要：基于微机电系统传感器工作原理,提出了一种应用于MEMS传感器系统的低温度系数和高电源抑制比基准电流源设计方案。在研究传统Widlar型基准电流源结构基础上,运用BJT小信号模型分析,得出通过增大反馈环路增益来提高PSRR的结论。Based on MEMS sensor working principle, a low temperature coefficient and high power supply rejection ratio reference current source was designed for MEMS sensor system. Based on the traditional Widlar-type structure reference current source, the BJT small-signal model was analyzed, the method of increasing the loop gain to enhance the reference current source PSRR was obtained, and to reduce the temperature coefficient, a self-compensation diode-loop increasing the current reference curvature compensation was designed.

关 键 词：MEMS 传感器 基准电流源 

分 类 号：TN431.1[电子电信—微电子学与固体电子学]