离子束增强沉积制备CrN_x薄膜  

FABRICATION OF CrN x FILMS BY IBED TECHNIQUE

作　　者：唐宾[1] 朱晓东[1] 胡奈赛[1] 何家文[1] 

机构地区：[1]西安交通大学金属材料强度国家重点实验室

出　　处：《中国有色金属学报》1999年第1期69-70,共2页The Chinese Journal of Nonferrous Metals

基　　金：国家自然科学基金

摘　　要：利用离子束增强沉积（ＩＢＥＤ）技术制备了ＣｒＮｘ薄膜。对不同能量氮离子轰击所制备的薄膜进行了Ｘ射线衍射、Ｘ射线光电子能谱分析、膜层断裂韧性以及摩擦学性能研究。试验结果表明，在相同试验条件下，氮离子轰击能量影响ＣｒＮｘ薄膜的相组成及取向，低能氮离子轰击所制薄膜具有较高的ＫＩＣ数值，且表现出更优异的摩擦学性能。CrN x films were synthesized with 4, 8 and 12 keV nitrogen ion of dose of 3 38×10 13 cm -2 ·s -1 by IBED. The structure of the films was characterized by X ray diffraction (XRD) and X ray photoelectron spectroscopy (XPS), wheras the wear and tear properties of the films were investigated on a block on ring tester. Results indicate that the phases and orientation of CrN x are affected obviously by nitrogen ion bombarding energy, and films with lower energy have better tribological property and higher fracture toughness, especially for 4 keV.

关 键 词：离子束增强沉积 薄膜 氮化铬 

分 类 号：O484[理学—固体物理] TG154.5[理学—物理]