rf-dc PECVD制备的a-C∶H(N)薄膜的结构分析  

Characterization of a-CH(N) Films Deposited by rf-dc PECVD

作　　者：程宇航[1] 吴一平[1] 陈建国 乔学亮[1] 谢长生[1] 

机构地区：[1]华中理工大学材料科学与工程系

出　　处：《功能材料》1999年第2期200-201,206,共3页Journal of Functional Materials

摘　　要：采用射频－直流等离子增强化学气相沉积技术用Ｃ２Ｈ２和Ｎ２气的混合气体制备出ａ－Ｃ∶Ｈ（Ｎ）薄膜，用ＴＥＭ、红外谱、ＸＰＳ等多种分析测试手段研究了薄膜的结构。结果表明ａ－Ｃ∶Ｈ（Ｎ）薄膜中Ｎ与Ｃ原子可形成ＮＣ、ＣＮ和ＮＣ键，而碳氢原子主要以ＣＨ２基的形式存在。且薄膜中存在具有理想化学配比的Ｃ３Ｎ４相。The a-CH(N) films were deposited from mixture of C2H2 and N2 by r.f.-d.c. PECVD method.The films were characterized by TEM,FTIR and XPS.Results show that N atoms are incorporated in a-CH(N) films as C N , C N and C N bonds. C atoms are incorporated with H mainly as CH2.The stoichiometry exist in a-CH(N) films, and a-CH(N) films are consisted of C3N4 crystallite phase and CN x matrix which is identified as predominantly sp2 bonded structure.

关 键 词：a-C:H(N)薄膜 PECVD 氮化钛 结构分析 

分 类 号：O484.1[理学—固体物理]