掺氧氮化硅发光二极管的发光特性研究  

Light emission from a-SiN∶O light-emitting diodes

作　　者：黄锐[1] 王旦清[2] 王祥[1] 陈坤基[2] 

机构地区：[1]韩山师范学院物理与电子工程系,广东潮州521041 [2]南京大学物理学院,江苏南京210093

出　　处：《激光与红外》2010年第8期901-903,共3页Laser & Infrared

基　　金：广东省自然科学基金项目(No.8152104101000004)资助

摘　　要：采用等离子体增强化学气相沉积方法低温制备非晶氮化硅薄膜,在低温下以氧气为气源,等离子体氧化非晶氮化硅薄膜,以这层薄作为有源层制备电致发光器件。实验结果表明以此方法制备的器件在正向偏置电压下可观测到强烈的黄绿光,发光峰位于540 nm,而且电致发光开启电压低,仅为6 V,功耗小。光致发光谱和电致发光谱测量表明发光来自同一种发光中心,即与Si-O相关的发光中心。High efficiency luminescent amorphous silicon nitride films grown at room temperature with subsequent plasma oxidation were used as the active layers in the electroluminescent devices.A strong uniform green-yellow light emission from the devices was realized under forward biased conditions.It was found that the turn-on voltage could be reduced to as low as 6 V under the same forward voltage.The EL peak position is located at 540 nm,which is more close to that of the corresponding photoluminescence peak.The origin of light emission is suggested to be the same kind of luminescent centers related to the Si-O bonds.

关 键 词：氮化硅 电致发光 光致发光 

分 类 号：TN24[电子电信—物理电子学]