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机构地区:[1]兰州大学磁学与磁性材料教育部重点实验室,兰州730000
出 处:《物理化学学报》2010年第8期2306-2310,共5页Acta Physico-Chimica Sinica
基 金:国家自然科学基金青年科学基金(50901037);国家基础科学人才培养基金(J0630313)资助项目~~
摘 要:用化学气相沉积(CVD)法制备了Mn掺杂的SnO2一维纳米结构(纳米线及纳米带),X射线衍射(XRD)显示样品为金红石型SnO2晶体,其生长机理可分别归结为气-液-固(VLS)和气-固(VS)机理,生长温度和气态原料浓度的差别是造成样品形貌及生长机理不同的主要原因.样品的拉曼谱出现了500、543、694和720cm-1四个新拉曼谱峰,分别是由活性的红外模和表面模引起的.纳米线及纳米带发光峰位于520nm处,发光强度随样品中氧空位的增减出现由强到弱的变化.Mn doped SnO2 one-dimensional nanostructures (nanowires and nanobelts) were fabricated using catalyst assisted chemical vapor deposition (CVD). X-ray diffraction revealed a rutile structure of SnO2 in all the products. The morphology and the growth mechanism of the products were sensitive to the fabrication temperature and the concentration of the gaseous source materials. The growth mechanisms of the nanowires and nanobelts can be ascribed to vapor-liquid-solid (VLS) and vapor-solid (VS) processes, respectively. Four new peaks appeared at 500, 543, 694, and 720 cm-1in the Raman spectra were attributed to the active infrared mode and the surface mode. A photoluminescence peak was observed at 520 nm and the intensity of the peak was closely dependent on the concentration of oxygen vacancies.
关 键 词:纳米结构 锰掺杂氧化锡 化学气相沉积 光学性质 生长机理
分 类 号:TB383.1[一般工业技术—材料科学与工程]
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