A high-performance enhancement-mode AIGaN/GaN HEMT  

作　　者：冯志红 谢圣银 周瑞 尹甲运 周伟 蔡树军 

机构地区：[1]National Key Laboratory of Application Specific Integrated Circui(Shijiazhuang)t [2]State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China [3]National Key Laboratory of Application Specific Integrated Circui(Shijiazhuang)

出　　处：《Journal of Semiconductors》2010年第8期45-47,共3页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Nos.60890192,60876009).

摘　　要：An enhancement-mode AlGaN/GaN HEMT with a threshold voltage of 0.35 V was fabricated by fluorine plasma treatment.The enhancement-mode device demonstrates high-performance DC characteristics with a saturation current density of 667 mA/mm at a gate bias of 4 V and a peak transconductance of 201 mS/mm at a gate bias of 0.8 V. The current-gain cut-off frequency and the maximum oscillation frequency of the enhancement-mode device with a gate length of 1μm are 10.3 GHz and 12.5 GHz,respectively,which is comparable with the depletion-mode device.A numerical simulation supported by SIMS results was employed to give a reasonable explanation that the fluorine ions act as an acceptor trap center in the barrier layer.An enhancement-mode AlGaN/GaN HEMT with a threshold voltage of 0.35 V was fabricated by fluorine plasma treatment.The enhancement-mode device demonstrates high-performance DC characteristics with a saturation current density of 667 mA/mm at a gate bias of 4 V and a peak transconductance of 201 mS/mm at a gate bias of 0.8 V. The current-gain cut-off frequency and the maximum oscillation frequency of the enhancement-mode device with a gate length of 1μm are 10.3 GHz and 12.5 GHz,respectively,which is comparable with the depletion-mode device.A numerical simulation supported by SIMS results was employed to give a reasonable explanation that the fluorine ions act as an acceptor trap center in the barrier layer.

关 键 词：ENHANCEMENT-MODE AlGaN/GaN HEMT fluorine plasma threshold voltage numerical simulation 

分 类 号：TN386[电子电信—物理电子学] TN304.23