Above 700 V superjunction MOSFETs fabricated by deep trench etching and epitaxial growth  

作　　者：李泽宏 任敏 张波 马俊 胡涛 张帅 王非 陈俭 

机构地区：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology [2]Shanghai Hua Hong NEC Electronics Company Limited

出　　处：《Journal of Semiconductors》2010年第8期48-52,共5页半导体学报（英文版）

摘　　要：Silicon superjunction power MOSFETs were fabricated with deep trench etching and epitaxial growth,based on the process platform of the Shanghai Hua Hong NEC Electronics Company Limited.The breakdown voltages of the fabricated superjunction MOSFETs are above 700 V and agree with the simulation.The dynamic characteristics, especially reverse diode characteristics,are equivalent or even superior to foreign counterparts.Silicon superjunction power MOSFETs were fabricated with deep trench etching and epitaxial growth,based on the process platform of the Shanghai Hua Hong NEC Electronics Company Limited.The breakdown voltages of the fabricated superjunction MOSFETs are above 700 V and agree with the simulation.The dynamic characteristics, especially reverse diode characteristics,are equivalent or even superior to foreign counterparts.

关 键 词：SUPERJUNCTION deep trench etching epitaxial growth power MOSFET 

分 类 号：TN386.1[电子电信—物理电子学] TN304.054