A new integrated SOI power device based on self-isolation technology  

作　　者：高唤梅 罗小蓉 张伟 邓浩 雷天飞 

机构地区：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China

出　　处：《Journal of Semiconductors》2010年第8期98-103,共6页半导体学报（英文版）

摘　　要：A new SOI LDMOS structure with buried n-islands（BNIs） on the top interface of the buried oxide（BOX） is presented in a p-SOI high voltage integrated circuits（p-SOI HVICs）,which exhibits good self-isolation performance between the power device and low-voltage control circuits.Furthermore,both the donor ions of BNIs and holes collected between depleted n-islands not only enhance the electric field in BOX from 32 to 113 V/μm,but also modulate the lateral electric field distribution,resulting in an improvement of the breakdown voltage of the BNI SOI LDMOS.A 673 V BNI SOI LDMOS is experimentally obtained and presents an excellent self-isolation performance in a p-SOI HVIC.A new SOI LDMOS structure with buried n-islands（BNIs） on the top interface of the buried oxide（BOX） is presented in a p-SOI high voltage integrated circuits（p-SOI HVICs）,which exhibits good self-isolation performance between the power device and low-voltage control circuits.Furthermore,both the donor ions of BNIs and holes collected between depleted n-islands not only enhance the electric field in BOX from 32 to 113 V/μm,but also modulate the lateral electric field distribution,resulting in an improvement of the breakdown voltage of the BNI SOI LDMOS.A 673 V BNI SOI LDMOS is experimentally obtained and presents an excellent self-isolation performance in a p-SOI HVIC.

关 键 词：buried n-islands self-isolation breakdown voltage electric field SOI 

分 类 号：TN386.1[电子电信—物理电子学]