残余碳对碳化硅陶瓷光学表面加工性能的影响  

EFFECT OF RESIDUAL CARBON ON OPTICAL SURFACE MACHINING QUALITY OF SILICON CARBIDE CERAMICS

作　　者：刘桂玲[1] 陈健[1] 黄政仁[1,2] 刘学建[1] 

机构地区：[1]中国科学院上海硅酸盐研究所,结构陶瓷工程中心,上海200050 [2]中国科学院上海硅酸盐研究所,高性能陶瓷和超微结构国家重点实验室,上海200050

出　　处：《硅酸盐学报》2010年第8期1523-1526,共4页Journal of The Chinese Ceramic Society

摘　　要：为深入了解碳化硅陶瓷的光学表面加工性能,采用常压固相烧结法制备了碳化硅陶瓷,在保证致密度的前提下,通过改变碳的含量,研究了残余碳对SiC陶瓷抛光面的表面质量和光学性能的影响。研究发现,C的质量含量为3%～7%时,SiC陶瓷抛光表面的RMS(root mean square)粗糙度均约为2nm。当C含量为3%～6%时,SiC陶瓷抛光表面在400～750nm波段的全反射率、漫反射率和镜面反射率无明显变化;当C含量升至7%时,全反射率稍有降低,漫反射率稍有上升,镜面反射率稍有降低。其原因可能是过多的残余碳引起SiC陶瓷的折射率下降和产生光学散射,最终造成镜面反射率降低。In order to further study the machining quality of optical surface of silicon carbide （SiC） ceramics,dense SiC ceramics were prepared by pressureless sintering technique. The effect of residual carbon on surface quality and the optical properties of SiC ceramics after polishing were investigated by changing the carbon content with constant density. The experimental results show that when the carbon content is 3%-7% in mass,the surface RMS （root mean square） roughness of polished SiC ceramics remains at a level of about 2 nm. When the carbon content is ranged at 3%-6% in mass,the total reflectance,diffused reflectance and specular reflectance of SiC ceramics after polishing within 400-750 nm wavelength range do not change significantly. When the carbon content increases to 7%,the total reflectance decreases in some sort,the diffused reflectance increases,and the specular reflectance decreases. The reason might be that the excessive carbon residual causes the reflective index of SiC ceramics decreasing,and generating optical diffusion,finally resulting in the reduction of specular reflectance.

关 键 词：碳化硅 残余碳 光学表面加工 反射率 

分 类 号：TH16[机械工程—机械制造及自动化]