在磁场作用下量子阱中类氢杂质束缚能的计算  

Calculation of the Binding Energy of Hydrgon-like Impurity in a Quantum Well in the Present of a Magnetic Field

作　　者：胡靖华[1] 孙晓东[1] 胡耀祖[2] 

机构地区：[1]武汉理工大学理学院,武汉430070 [2]武汉理工大学信息工程学院,武汉430070

出　　处：《武汉理工大学学报》2010年第13期48-50,共3页Journal of Wuhan University of Technology

摘　　要：采用了Lee T D,et al变分法和Jiang H X强微扰理论计算在磁场作用下量子阱中类氢杂质的束缚能,考虑了电子与纵光学声子LO和面光学声子SO之间的互相作用,得到类氢杂质束缚能随磁场根方增加,随阱宽增加而减小,电子自能不受磁场影响。Both the electron-LO-phonon interaction and the electron-SO-phonon interaction are taken into account in this chapter.The Hamiltonian of impurity atom in the quantum well in the presence of a magnetic field is given.Calculation of the binding energy of impurity atom is given by Lee,et al variation technique and Jiang H X strong-perturbation theory.It is found that the binding energy of impurity atom increases with increasing the root square of magnetic field intensity and decreases with increasing the well-width.The electronic self-energy is independent of magnetic field.

关 键 词：量子阱 有效哈密顿量 有效质量 束缚能 

分 类 号：O471.5[理学—半导体物理]