新型MPCVD金刚石膜等离子发生器及等离子特性数值模拟  

Numerical Simulation of Plasma in Novel Plasma Reactor for MPCVD Diamond Film

作　　者：李晓静[1] 于盛旺[1] 张思凯[1] 唐伟忠[1] 吕反修[1] 

机构地区：[1]北京科技大学材料科学与工程学院,北京100083

出　　处：《人工晶体学报》2010年第4期867-871,共5页Journal of Synthetic Crystals

基　　金：国家自然科学基金(No.10675017);高等学校博士学科点专项科研基金资助课题(No.20060008013)

摘　　要：本文提出了用于化学气相沉积金刚石膜的新型微波等离子体发生器。使用环形介质窗口,置于沉积台的下方而远离等离子体,允许产生体积较大并且温度较高的等离子体。采用时域有限差分法结合Matlab语言,模拟了发生器内的电场分布和等离子体电子密度,研究微波输入功率﹑气体压力等控制工艺参数对等离子体特性的影响。模拟结果表明,在一定微波输入功率和气体压力条件下,在沉积台上方形成均匀分布的等离子体,电场强度﹑电子密度和吸收功率密度随微波工艺参数的改变而呈现有规律的变化。本研究将为微波等离子体化学气相沉积技术的改进提供参考,为进一步建立使用此种新型等离子发生器的MPCVD设备奠定了基础。New microwave plasma reactor for CVD diamond film was proposed in this paper. Ring shape quartz dielectric window was employed on the bottom side of the substrate holder and so fully shielded from the plasma,larger plasma could be formed with higher temperature. The calculation of electric field distribution and the number density of electrons were simulated by Finite Difference Time Domain（ FDTD） method and Matlab. The influence of operating parameters on plasma characteristics was studied,such as microwave input power and gas pressure. The simulation results show that,uniform plasma with high electron density was ignited on the substrate,on condition of a certain microwave power and gas pressure. Electric field strength,electron number density and absorbed power density varied with operating condition. This study will provide reference for further improvement of MPCVD techniques and theoretical basis for manufacture of new MPCVD system with this kind of plasma reactor.

关 键 词：等离子反应腔 数值模拟 时域有限差分法 电子密度 

分 类 号：O53[理学—等离子体物理]